메뉴 건너뛰기




Volumn 21, Issue 17, 2009, Pages

Rigid ion model of high field transport inGaN

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONONS; ALGAN/GAN; ANHARMONIC; ANISOTROPIC DEFORMATIONS; CARRIER DENSITIES; CELLULAR MONTE CARLO; DEFORMATION POTENTIALS; DETAILED BALANCES; EIGENVECTORS; ENERGY RELAXATIONS; EXPERIMENTAL DATUM; HEXAGONAL WURTZITE STRUCTURES; HIGH-FIELD TRANSPORTS; HOT PHONONS; I-V MEASUREMENTS; IONIZED IMPURITY SCATTERINGS; LATTICE DYNAMICS; LO PHONONS; NON EQUILIBRIUMS; NONEQUILIBRIUM PHONONS; OPTICAL MODES; PEAK VELOCITIES; PHONON DISPERSIONS; POLAR OPTICAL PHONON SCATTERINGS; POLARIZATION EFFECTS; PSEUDOPOTENTIAL; PSEUDOPOTENTIALS; VELOCITY-FIELD CHARACTERISTICS; ZINC BLENDES;

EID: 65449171163     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/17/174206     Document Type: Article
Times cited : (24)

References (52)
  • 1
    • 0028385147 scopus 로고
    • Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
    • Nakamura S, Mukai T and Senoh M 1994 Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Appl. Phys. Lett. 64 1687-9
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.13 , pp. 1687-1689
    • Nakamura Mukai, S.T.1    Senoh, M.2
  • 2
    • 0028485013 scopus 로고
    • Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
    • Chow T P and Tyagi R 1994 Wide bandgap compound semiconductors for superior high-voltage unipolar power devices IEEE Trans. Electron Devices 41 1481-3
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.8 , pp. 1481-1483
    • Chow, T.P.1    Tyagi, R.2
  • 3
    • 0034508836 scopus 로고    scopus 로고
    • Fabrication and performance of GaN electronic devices
    • Pearton S J, Ren F, Zhang A P and Lee K P 2000 Fabrication and performance of GaN electronic devices Mater. Sci. Eng. R 30 55-212
    • (2000) Mater. Sci. Eng. , vol.30 , Issue.3-6 , pp. 55-212
    • Pearton, S.J.1    Ren, F.2    Zhang, A.P.3    Lee, K.P.4
  • 4
    • 0347373724 scopus 로고    scopus 로고
    • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
    • Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S and Mishra U K 2000 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors Appl. Phys. Lett. 77 250-2
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.2 , pp. 250-252
    • Ibbetson, J.P.1    Fini, P.T.2    Ness, K.D.3    Denbaars, S.P.4    Speck, J.S.5    Mishra, U.K.6
  • 6
    • 33745040547 scopus 로고    scopus 로고
    • max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
    • max AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation Phys. Status Solidi a 203 1851-5
    • (2006) Phys. Status Solidi , vol.203 , Issue.7 , pp. 1851-1855
    • Higashiwaki, M.1    Onojima, N.2    Matsui, T.3    Mimura, T.4
  • 7
    • 0000234219 scopus 로고    scopus 로고
    • Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
    • Wraback M 2000 Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN Appl. Phys. Lett. 76 1155-7
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.9 , pp. 1155-1157
    • Wraback, M.1
  • 12
    • 0345021762 scopus 로고
    • Monte Carlo calculation of the velocity-field relationship for gallium nitride
    • Littlejohn M A, Hauser J R and Glisson T H 1975 Monte Carlo calculation of the velocity-field relationship for gallium nitride Appl. Phys. Lett. 26 625-7
    • (1975) Appl. Phys. Lett. , vol.26 , Issue.11 , pp. 625-627
    • Littlejohn, M.A.1    Hauser, J.R.2    Glisson, T.H.3
  • 13
    • 0027640420 scopus 로고
    • Monte Carlo simulation of electron transport in gallium nitride
    • Gelmont B, Kim K W and Shur M 1993 Monte Carlo simulation of electron transport in gallium nitride J. Appl. Phys. 74 1818-21
    • (1993) J. Appl. Phys. , vol.74 , Issue.3 , pp. 1818-1821
    • Gelmont Kim, B.K.W.1    Shur, M.2
  • 14
    • 0001480573 scopus 로고
    • Theoretical study of electron transport in gallium nitride
    • Mansour N S, Kim K W and Littlejohn M A 1994 Theoretical study of electron transport in gallium nitride J. Appl. Phys. 77 2834-6
    • (1994) J. Appl. Phys. , vol.77 , Issue.6 , pp. 2834-2836
    • Mansour, N.S.1    Kim, K.W.2    Littlejohn, M.A.3
  • 15
    • 0001556024 scopus 로고    scopus 로고
    • Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
    • Bhapkar U V and Shur M S 1997 Monte Carlo calculation of velocity-field characteristics of wurtzite GaN J. Appl. Phys. 82 1649-55
    • (1997) J. Appl. Phys. , vol.82 , Issue.4 , pp. 1649-1655
    • Bhapkar, U.V.1    Shur, M.S.2
  • 16
    • 21544477731 scopus 로고
    • Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
    • Kolník J, Ouzman H, Brennan K, Wang R, Ruden P P and Wang Y 1995 Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure J. Appl. Phys. 78 1033-8
    • (1995) J. Appl. Phys. , vol.78 , Issue.2 , pp. 1033-1038
    • Kolník, J.1    Ouzman, H.2    Brennan, K.3    Wang, R.4    Ruden, P.P.5    Wang, Y.6
  • 18
    • 0000617809 scopus 로고
    • Intervalley deformation potentials and scattering rates in zinc blende semiconductors
    • Zollner S, Gopalan S and Cardona M 1989 Intervalley deformation potentials and scattering rates in zinc blende semiconductors Appl. Phys. Lett. 54 614-6
    • (1989) Appl. Phys. Lett. , vol.54 , Issue.7 , pp. 614-616
    • Zollner Gopalan, S.S.1    Cardona, M.2
  • 19
    • 36449002522 scopus 로고
    • A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model
    • Kunikiyo T, Takenaka M, Kamakura Y, Yamaji M, Mizuno H, Morifuji M, Taniguchi K and Hamaguchi C 1994 A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model J. Appl. Phys. 75 297-312
    • (1994) J. Appl. Phys. , vol.75 , Issue.1 , pp. 297-312
    • Kunikiyo, T.1    Takenaka, M.2    Kamakura, Y.3    Yamaji, M.4    Mizuno, H.5    Morifuji, M.6    Taniguchi, K.7    Hamaguchi, C.8
  • 20
    • 35949009958 scopus 로고
    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • Fischetti M V and Laux S E 1988 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Phys. Rev. B 38 9721-45
    • (1988) Phys. Rev. , vol.38 , Issue.14 , pp. 9721-9745
    • Fischetti, M.V.1    Laux, S.E.2
  • 22
    • 0001108207 scopus 로고    scopus 로고
    • Hole transport properties of bulk zinc-blende and wurtzite phase of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
    • Ouzman H, Kolník J, Brennan K F, Wang R, Fang T and Ruden P P 1996 Hole transport properties of bulk zinc-blende and wurtzite phase of GaN based on an ensemble Monte Carlo calculation including a full zone band structure J. Appl. Phys. 80 4429-36
    • (1996) J. Appl. Phys. , vol.80 , Issue.8 , pp. 4429-4436
    • Ouzman, H.1    Kolník, J.2    Brennan, K.F.3    Wang, R.4    Fang, T.5    Ruden, P.P.6
  • 25
    • 5344227779 scopus 로고
    • Calculation of the gamma-delta electron-phonon and hole-phonon scattering matrix elements in silicon
    • Bednarek S and Rössler U 1984 Calculation of the gamma-delta electron-phonon and hole-phonon scattering matrix elements in silicon Phys. Rev. Lett. 48 1296
    • (1984) Phys. Rev. Lett. , vol.48 , Issue.18 , pp. 1296
    • Bednarek, S.1    Rössler, U.2
  • 27
    • 0001760350 scopus 로고
    • Lattice dynamics of zinc-blende structure compounds using deformation-dipole model and rigid ion model
    • Kunc K and Nielson O H 1979 Lattice dynamics of zinc-blende structure compounds using deformation-dipole model and rigid ion model Comput. Phys. Commun. 17 413
    • (1979) Comput. Phys. Commun. , vol.17 , Issue.4 , pp. 413
    • Kunc, K.1    Nielson, O.H.2
  • 29
    • 0030205114 scopus 로고    scopus 로고
    • Lattice dynamics of zinc-blende GaN and AlN: I. Bulk phonons
    • Zi J, Wan X, Wei G, Zhang K and Xi X 1996 Lattice dynamics of zinc-blende GaN and AlN: I. Bulk phonons J. Phys.: Condens. Matter 8 6323
    • (1996) J. Phys.: Condens. Matter , vol.8 , Issue.35 , pp. 6323
    • Zi, J.1    Wan, X.2    Wei, G.3    Zhang, K.4    Xi, X.5
  • 34
    • 0035132250 scopus 로고    scopus 로고
    • Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering
    • Ruf T, Serrano J and Cardona M 2001 Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering Phys. Rev. Lett. 86 906-9
    • (2001) Phys. Rev. Lett. , vol.86 , Issue.5 , pp. 906-909
    • Ruf Serrano, T.J.1    Cardona, M.2
  • 35
    • 0034670725 scopus 로고    scopus 로고
    • Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN
    • Bulutay C, Ridly B K and Zakhleniuk N A 2000 Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN Phys. Rev. B 62 15754-63
    • (2000) Phys. Rev. , vol.62 , Issue.23 , pp. 15754-15763
    • Bulutay Ridly, C.B.K.1    Zakhleniuk, N.A.2
  • 36
    • 0000450062 scopus 로고    scopus 로고
    • Electron-optical-phonon scattering in wurtzite crystals
    • Lee B C, Kim K W, Dutta M and Stroscio M A 1997 Electron-optical-phonon scattering in wurtzite crystals Phys. Rev. B 56 997-1000
    • (1997) Phys. Rev. , vol.56 , Issue.3 , pp. 997-1000
    • Lee, B.C.1    Kim, K.W.2    Dutta, M.3    Stroscio, M.A.4
  • 39
    • 36449008979 scopus 로고
    • Electron mobilities in gallium, indium, and aluminum nitrides
    • Chin V W L, Tansley T L and Osotchan T 1994 Electron mobilities in gallium, indium, and aluminum nitrides J. Appl. Phys. 75 7365-72
    • (1994) J. Appl. Phys. , vol.75 , Issue.11 , pp. 7365-7372
    • Chin, V.W.L.1    Tansley, T.L.2    Osotchan, T.3
  • 40
    • 0001262038 scopus 로고    scopus 로고
    • Theoretical investigation of edge dislocations in AlN
    • Wright A F and Furthmuller J 1998 Theoretical investigation of edge dislocations in AlN Appl. Phys. Lett. 72 3467-9
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.26 , pp. 3467-3469
    • Wright, A.F.1    Furthmuller, J.2
  • 41
    • 0000262195 scopus 로고    scopus 로고
    • The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
    • Wright A F and Grossner U 1998 The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN Appl. Phys. Lett. 73 2751-3
    • (1998) Appl. Phys. Lett. , vol.73 , Issue.19 , pp. 2751-2753
    • Wright, A.F.1    Grossner, U.2
  • 42
    • 0009315151 scopus 로고
    • The theory of electron states connected with dislocations, I. Linear dislocations
    • Bonch-Bruevich V L and Glasko V B 1961 The theory of electron states connected with dislocations, I. Linear dislocations Fiz. Tverd. Tela 3 36
    • (1961) Fiz. Tverd. Tela , vol.3 , pp. 36
    • Bonch-Bruevich, V.L.1    Glasko, V.B.2
  • 44
    • 84985574468 scopus 로고
    • Electron mobility in plastically deformed germanium
    • Pödör B 1966 Electron mobility in plastically deformed germanium Phys. Status Solidi 16 K167
    • (1966) Phys. Status Solidi , vol.16 , Issue.2 , pp. 167
    • Pödör, B.1
  • 46
    • 0000926633 scopus 로고    scopus 로고
    • Dislocation scattering in GaN
    • Look D C and Sizelove J R 1999 Dislocation scattering in GaN Phys. Rev. Lett. 82 1237-40
    • (1999) Phys. Rev. Lett. , vol.82 , Issue.6 , pp. 1237-1240
    • Look, D.C.1    Sizelove, J.R.2
  • 47
    • 0000642431 scopus 로고
    • Scattering by ionized impurities in semiconductors
    • Brooks H and Herring C 1951 Scattering by ionized impurities in semiconductors Phys. Rev. 83 879
    • (1951) Phys. Rev. , vol.83 , pp. 879
    • Brooks, H.1    Herring, C.2
  • 48
    • 0000288412 scopus 로고
    • Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference
    • Ridley B K 1977 Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: third-body interference J. Phys. C: Solid State Phys. 10 1589
    • (1977) J. Phys. C: Solid State Phys. , vol.10 , Issue.10 , pp. 1589
    • Ridley, B.K.1
  • 49
    • 0034297464 scopus 로고    scopus 로고
    • Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors
    • Saraniti M and Goodnick S M 2000 Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors IEEE Trans. Electron Devices 47 1909-6
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.10 , pp. 1909-1906
    • Saraniti, M.1    Goodnick, S.M.2
  • 51
    • 0001149918 scopus 로고
    • Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation
    • Lugli P, Bordone P, Reggiani L, Rieger M, Kocever P and Goodnick S M 1989 Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation Phys. Rev. B 39 7852-65
    • (1989) Phys. Rev. , vol.39 , Issue.11 , pp. 7852-7865
    • Lugli, P.1    Bordone, P.2    Reggiani, L.3    Rieger, M.4    Kocever, P.5    Goodnick, S.M.6
  • 52
    • 33748709870 scopus 로고    scopus 로고
    • Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on the injected carrier density
    • Tsen K S, Kiang J G, Ferry D K and Morkoc H 2006 Subpicosecond time-resolved Raman studies of LO phonons in GaN: dependence on the injected carrier density Appl. Phys. Lett. 89 112111
    • (2006) Appl. Phys. Lett. , vol.89 , Issue.11 , pp. 112111
    • Tsen, K.S.1    Kiang, J.G.2    Ferry, D.K.3    Morkoc, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.