Hot-electron transport in AIGaN/GaN two-dimensional conducting channels

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5421-5423

  Danilchenko, B A ^a   Zelensky, S E ^a   Drok, E ^a   Vitusevich, S A ^b   Danylyuk, S V ^b   Klein, N ^b   Luth H ^b   Belyaev, A E ^c   Kochelap, V A ^c  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ENERGY DISSIPATION; HETEROJUNCTIONS; LIGHT SCATTERING; MOSFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS;

CONDUCTING CHANNELS; ELECTRON TEMPERATURE; ELECTRON TRANSPORT; VAN DER PAUW METHOD;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 11044225402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1830078     Document Type: Article

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