SCOPUS 정보 검색 플랫폼

Volumn 42, Issue 13, 2006, Pages 779-780

Small-signal characteristics of AlInN/GaN HEMTs

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; OSCILLATIONS; PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) TECHNOLOGY; MATERIAL QUALITY; OSCILLATION FREQUENCIES;

TRANSISTORS;

EID: 33745464517 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20060768 Document Type: Article

Times cited : (46)

References (9)

1
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- Mishra, U.K.¹

2
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- 30-W/mm GaN HEMTs by field plate optimization
- Wu, Y.-F.: et al. ' 30-W/mm GaN HEMTs by field plate optimization ', IEEE Electron Device Lett., 2004, 25, p. 117
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 117
- Wu, Y.-F.¹

3
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- Power electronics on InAlN/(In)GaN: Prospect for a record performance
- Kuzmik, J.: ' Power electronics on InAlN/(In)GaN: prospect for a record performance ', IEEE Electron Device Lett., 2001, 22, p. 510
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 510
- Kuzmik, J.¹

4
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- InAlN/(In)GaN high electron mobility transistors: Some aspects of the quantum well heterostructure proposal
- Kuzmik, J.: ' InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal ', Semicond. Sci. Technol., 2002, 17, p. 540
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 540
- Kuzmik, J.¹

5
- 4243188128
- InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy
- Higashiwaki, M.: et al. ' InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy ', Jpn. J. Appl. Phys., 2004, 43, (6B), p. L768
- (2004) Jpn. J. Appl. Phys. , vol.43 , Issue.6 B , pp. 768
- Higashiwaki, M.¹

6
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- High sheet charge carrier density AlInN/GaN field-effect transistors on Si (111)
- Dadgar, A.: et al. ' High sheet charge carrier density AlInN/GaN field-effect transistors on Si (111) ', Appl. Phys. Lett., 2004, 85, p. 5400
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5400
- Dadgar, A.¹

7
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- InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics
- Katz, O.: et al. ' InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics ', Electron. Lett., 2004, 40, (20), p. 1304
- (2004) Electron. Lett. , vol.40 , Issue.20 , pp. 1304
- Katz, O.¹

8
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- Unstrained AlInN/GaN FET
- Neuburger, M.: et al. ' Unstrained AlInN/GaN FET ', Int. J. High Speed Electron. Syst., 2004, 14, (3), p. 785-790
- (2004) Int. J. High Speed Electron. Syst. , vol.14 , Issue.3 , pp. 785-790
- Neuburger, M.¹

9
- 0041511972
- High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
- Carlin, J.-F.: et al. ' High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN ', Appl. Phys. Lett., 2003, 83, p. 668
- (2003) Appl. Phys. Lett. , vol.83 , pp. 668
- Carlin, J.-F.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.