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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 29-32, 2006, Pages

High-performance short-gate InAlN/GaN heterostructure field-effect transistors

(3) Higashiwaki, Masataka a Mimura, Takashi a,b Matsui, Toshiaki a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

Catalytic chemical; Current gain cutoff frequency (f t); GaN; Heterostructure field effect transistor (HFET); InAlN; Maximum oscillation frequency (fmax); Vapor deposition (Cat CVD)

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CUTOFF FREQUENCY; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

CURRENT-GAIN CUTOFF FREQUENCY; GATE LENGTH; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; MAXIMUM OSCILLATION FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 33846234502 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L843 Document Type: Article

Times cited : (35)

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