Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 19, 2007, Pages

  Goh, K E J ^a,b   Simmons, M Y ^a   Hamilton, A R ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36148981524     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.193305     Document Type: Article

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