Weak localization thickness measurements of Si:P delta-layers

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6362-6364

  Sullivan, D F ^a   Kane, B E ^a   Thompson, P E ^b  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MAGNETIC FIELDS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; PHOSPHORUS; QUANTUM THEORY; STRUCTURE (COMPOSITION); THERMAL DIFFUSION;

ION MASS SPECTROMETRY; LOCALIZATION; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; METAL-INSULATOR TRANSITION (MIT);

SEMICONDUCTING SILICON;

EID: 13444249779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842366     Document Type: Article

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