Origin of type-C defects on the Si(100)-(2×1) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 16, 2002, Pages 1613021-1613024

  Nishizawa, Masayasu ^a   Yasuda, Tetsuji ^a   Yamasaki, Satoshi ^a   Miki, Kazushi ^a   Shinohara, Masanori ^a   Kamakura, Nozomu ^a   Kimura, Yasuo ^a   Niwano, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ABSORPTION SPECTROSCOPY; ADSORPTION; ARTICLE; DISSOCIATION; INFRARED SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; VACUUM;

EID: 0037091803     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)