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Volumn 202, Issue 6, 2005, Pages 1002-1005
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Relevance of phosphorus incorporation and hydrogen removal for Si : P δ-doped layers fabricated using phosphine
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Author keywords
[No Author keywords available]
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Indexed keywords
DOPANTS;
ELECTRICAL ACTIVATION;
PHOSPHINE DOSING;
PHOSPHORUS INCORPORATION;
ACTIVATION ENERGY;
CARRIER CONCENTRATION;
HALL EFFECT;
HYDROGEN;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
SILICON;
PHOSPHORUS;
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EID: 25444527987
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200460764 Document Type: Conference Paper |
Times cited : (11)
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References (17)
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