Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

  Beyer, V ^a   Von Borany, J ^a   Klimenkov, M ^b   Muller T ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT DISTRIBUTIONS; ELECTRICAL FIELD; FLUENCES; GATE OXIDE; KINETIC LATTICE MONTE CARLO SIMULATIONS; METAL OXIDE SEMICONDUCTOR; SI NANOCRYSTAL; THIN GATE OXIDES;

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; DISSOLUTION; GATES (TRANSISTOR); GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; METAL RECOVERY; MONTE CARLO METHODS; MOS DEVICES; NANOCRYSTALS; OXIDES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70349634922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3190520     Document Type: Article

References (43)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabb́, and K. Chan, Appl. Phys. Lett. 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
2. J. von Borany, T. Gebel, K. -H. Stegemann, H. -J. Thees, and M. Wittmaack, Solid-State Electron. 0038-1101 46, 1729 (2002). 10.1016/S0038- 1101(02)00142-9 (Pubitemid 35214310)
3. B. De Salvo, G. Ghibaudo, G. Pananakakis, P. Masson, T. Baron, N. Buffet, A. Fernandes, and B. Guillaumot, IEEE Trans. Electron Devices 0018-9383 48, 1789 (2001). 10.1109/16.936709
4. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. B. Assayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, and M. Fanciulli, Nucl. Instrum. Methods Phys. Res. B 0168-583X 216, 228 (2004). 10.1016/j.nimb.2003.11. 039
5. B. Schmidt, K. -H. Heinig, L. Röntzsch, T. Müller, K. -H. Stegemann, and E. Votintseva, Nucl. Instrum. Methods Phys. Res. B 0168-583X 242, 146 (2006). 10.1016/j.nimb.2005.08.011
6. K. K. Likharev, Appl. Phys. Lett. 0003-6951 73, 2137 (1998). 10.1063/1.122402 (Pubitemid 128672092)
7. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 0018-9383 49, 1606 (2002). 10.1109/TED.2002.802617 (Pubitemid 35017147)
8. R. Ohba, N. Sugiyama, K. Uchida, J. Koga, and A. Toriumi, IEEE Trans. Electron Devices 0018-9383 49, 1392 (2002). 10.1109/TED.2002.801296 (Pubitemid 34891179)
9. G. Groeseneken, H. E. Maes, J. VanHoudt, and J. S. Witters, Basics of Nonvolatile Semiconductor Memory Devices (IEEE, Piscataway, NJ, 1998), Chap..
10. K. I. Lundstroem and C. M. Svensson, IEEE Trans. Electron Devices 0018-9383 19, 826 (1972). 10.1109/T-ED.1972.17500
11. B. De Salvo, G. Ghibaudo, P. Luthereau, T. Baron, B. Guillaumot, and G. Reimbold, Solid-State Electron. 0038-1101 45, 1513 (2001). 10.1016/S0038- 1101(01)00070-3
12. A. Kalnitsky, A. R. Boothroyd, and J. P. Ellul, Solid-State Electron. 0038-1101 33, 893 (1990). 10.1016/0038-1101(90)90071-L
13. V. Beyer, J. von Borany, and M. Klimenkov, J. Appl. Phys. 0021-8979 101, 094507 (2007). 10.1063/1.2723864 (Pubitemid 46753108)
14. V. Beyer, J. von Borany, and M. Klimenkov, Appl. Phys. Lett. 0003-6951 89, 193505 (2006). 10.1063/1.2387900 (Pubitemid 44729734)
15. J. von Borany, R. Grötzschel, K. -H. Heinig, A. Markwitz, B. Schmidt, W. Skorupa, and H. -J. Thees, Solid-State Electron. 0038-1101 43, 1159 (1999). 10.1016/S0038-1101(99)00040-4
16. T. Gebel, J. Borany, H. -J. Thees, M. Wittmaack, K. -H. Stegemann, and W. Skorupa, Microelectron. Eng. 0167-9317 59, 247 (2001). 10.1016/S0167-9317(01) 00634-7 (Pubitemid 33018421)
17. C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. B. Assayag, A. Claverie, T. Müller, K. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis, and P. Normand, J. Appl. Phys. 0021-8979 95, 5696 (2004). 10.1063/1.1695594
18. P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G. B. Assayag, A. Claverie, M. Perego, M. Franciulli, V. Soncini, R. Sotgiu, A. Agarwal, M. Ameen, C. Sohl, and P. Normand, Solid-State Electron. 0038-1101 48, 1511 (2004). 10.1016/j.sse.2004.03.016
19. V. Beyer and J. von Borany, Phys. Rev. B 0163-1829 77, 014107 (2008). 10.1103/PhysRevB.77.014107
20. K. -H. Heinig, T. Müller, B. Schmidt, M. Strobel, and W. Möller, Appl. Phys. A: Mater. Sci. Process. 0947-8396 77, 17 (2003). 10.1007/s00339-002-2061-9
21. T. Müller, K. -H. Heinig, and W. Möller, Appl. Phys. Lett. 0003-6951 81, 3049 (2002). 10.1063/1.1512952 (Pubitemid 35328463)
22. Z. A. Weinberg, J. Appl. Phys. 0021-8979 53, 5052 (1982). 10.1063/1.331336
23. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 0021-8979 40, 278 (1969). 10.1063/1.1657043
24. Z. A. Weinberg, Solid-State Electron. 0038-1101 20, 11 (1977). 10.1016/0038-1101(77)90027-2
25. W. -C. Lee and C. Hu, IEEE Trans. Electron Devices 0018-9383 48, 1366 (2001). 10.1109/16.930653
26. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
27. A. Haque and K. Alam, Appl. Phys. Lett. 0003-6951 81, 667 (2002). 10.1063/1.1495084 (Pubitemid 34923986)
28. Y. T. Hou, M. F. Li, and W. H. Lai, Appl. Phys. Lett. 0003-6951 78, 4034 (2001). 10.1063/1.1379786
29. Y. T. Hou, M. F. Li, Y. Jin, and W. H. Lai, J. Appl. Phys. 0021-8979 91, 258 (2002). 10.1063/1.1416861 (Pubitemid 34047266)
30. L. F. Register, E. Rosenbaum, and K. Yang, Appl. Phys. Lett. 0003-6951 74, 457 (1999). 10.1063/1.123060
31. S. -H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 0741-3106 18, 209 (1997). 10.1109/55.568766
32. T. Ishii, T. Osabe, T. Mine, F. Murai, and K. Yano, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2000, 305-308.
33. R. Clerc, P. O'Sullivan, K. McCarthy, G. Ghibaudo, G. Pananakakis, and A. Mathewson, Solid-State Electron. 0038-1101 45, 1705 (2001). 10.1016/S0038-1101(01)00220-9 (Pubitemid 32903559)
34. J. See, P. Dollfus, S. Galdin, and P. Hesto, J. Appl. Phys. 0021-8979 94, 5053 (2003). 10.1063/1.1610803
35. W. Möller and W. Eckstein, Nucl. Instrum. Methods Phys. Res. B 0168-583X 2, 814 (1984). 10.1016/0168-583X(84)90321-5
36. A. Puzder, A. J. Williamson, J. C. Grossman, and G. Galli, J. Chem. Phys. 0021-9606 117, 6721 (2002). 10.1063/1.1504707 (Pubitemid 35327226)
37. Y. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 0003-6951 77, 1182 (2000). 10.1063/1.1289659
38. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 0163-1829 58, 7921 (1998). 10.1103/PhysRevB.58.7921
39. Y. Ishikawa, M. Kosugi, T. Tsuchiya, and M. Tabe, Jpn. J. Appl. Phys., Part 1 0021-4922 40, 1866 (2001). 10.1143/JJAP.40.1866
40. V. Beyer, J. von Borany, and K. -H. Heinig, J. Appl. Phys. 0021-8979 101, 053516 (2007). 10.1063/1.2436834 (Pubitemid 46442604)
41. T. Müller, Ph.D. thesis, TU Dresden, 2005, Wiss.-Techn. Berichte, FZR-439.
42. B. Schmidt, D. Grambole, and F. Herrmann, Nucl. Instrum. Methods Phys. Res. B 0168-583X 191, 482 (2002). 10.1016/S0168-583X(02)00597-9 (Pubitemid 34613986)
43. B. H. Koh, E. W. H. Kan, W. K. Chim, and W. K. Choi, J. Appl. Phys. 0021-8979 97, 124305 (2005). 10.1063/1.1931031 (Pubitemid 40925352)