Non-volatile memories based on Si+-implanted gate oxides

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 247-252

  Gebel, T ^a,b   Von Borany, J ^a   Thees, H J ^c   Wittmaack, M ^c   Stegemann, K H ^c   Skorupa, W ^a,b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

^c Zentrum Mikroelektronik Dresden GmbH   (Germany)

Author keywords

Ion implantation; Nanocrystal; Non volatile memory

Indexed keywords

ELECTRIC PROPERTIES; ION IMPLANTATION; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; SILICON; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

GATE OXIDES;

NONVOLATILE STORAGE;

EID: 0035498584     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00634-7     Document Type: Conference Paper

References (9)