Formation of narrow nanocluster bands in Ge-implanted SiO2-layers

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1159-1163

  Von Borany, J ^a   Grotzschel R ^a   Heinig, K H ^a   Markwitz, A ^a   Schmidt, B ^a   Skorupa, W ^a   Thees, H J ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Zentrum Mikroelektronik Dresden GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; NUCLEATION; SILICA;

ION BEAM SYNTHESIS;

SEMICONDUCTING GERMANIUM;

EID: 0344718526     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00040-4     Document Type: Article

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