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Volumn 101, Issue 5, 2007, Pages

Dissociation of Si+ ion implanted and as-grown thin SiO2 layers during annealing in ultra-pure neutral ambient by emanation of SiO

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOCIATION; ELECTRON MICROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; STOICHIOMETRY;

EID: 33947432480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2436834     Document Type: Article
Times cited : (15)

References (31)
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    • Carlberg, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.