Accurate modeling of direct tunneling hole current in p-metal-oxide- semiconductor devices

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 667-669

  Haque, A ^a   Alam, K ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MODELING; BULK VALUE; DIRECT TUNNELING; DIRECT TUNNELING CURRENTS; EFFECTIVE MASS; EXPERIMENTAL DATA; GATE BIAS DEPENDENCE; GATE BIAS VOLTAGE; GATE OXIDE; GATE VOLTAGES; HOLE CURRENT; HOLE EFFECTIVE MASS; HOLE TUNNELING; POLYCRYSTALLINE SILICON GATES; SCATTERING RATES; STRONG INVERSION;

BIAS VOLTAGE; DIELECTRIC DEVICES; ELECTRON TUNNELING; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICE MODELS;

EID: 79956031149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495084     Document Type: Article

References (17)

1. Y. Shi, T. P. Ma, S. Prasad, and S. Dhanda, IEEE Trans. Electron Devices 45, 2355 (1998). etd IETDAI 0018-9383
2. W.-C. Lee, T.-J. King, and C. Hu, IEEE Electron Device Lett. 20, 268 (1999). edl EDLEDZ 0741-3106
3. W.-C. Lee and C. Hu, IEEE Trans. Electron Devices 48, 1366 (2001). etd IETDAI 0018-9383
4. K.-N. Yang, H.-T. Huang, M.-C. Chang, C.-M. Chu, Y.-S. Chen, M.-J. Chen, Y.-M. Lin, M.-C. Yu, S. M. Jang, C. H. Yu, and M. S. Liang, IEEE Trans. Electron Devices 47, 2161 (2000). etd IETDAI 0018-9383
5. Y. T. Hou, M. F. Li, and W. H. Lai, Appl. Phys. Lett. 78, 4034 (2001); apl APPLAB 0003-6951
6. Y. T. Hou, M. F. Li, Y. Jin, and W. H. Lai, J. Appl. Phys. 91, 258 (2002). jap JAPIAU 0021-8979
7. A. Ghetti, J. Bude, and G. Weber, IEEE Trans. Electron Devices 48, 1354 (2001). etd IETDAI 0018-9383
8. A. Haque and A. N. Khondker, J. Appl. Phys. 84, 5802 (1998). jap JAPIAU 0021-8979
9. A. Haque, A. Rahman, and I. B. Chowdhury, Solid-State Electron. 44, 1833 (2000). sel SSELA5 0038-1101
10. A. D. Stone and P. A. Lee, Phys. Rev. Lett. 54, 1196 (1985). prl PRLTAO 0031-9007
11. A. N. Khondker and M. A. Alam, Phys. Rev. B 44, 5444 (1991). prb PRBMDO 0163-1829
12. K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and A. Haque J. Appl. Phys. 92, 937 (2002). jap JAPIAU 0021-8979
13. Y. T. Hou and M.-F. Li, IEEE Trans. Electron Devices 48, 1188 (2001). etd IETDAI 0018-9383
14. A. Ghetti, C.-T. Liu, M. Mastrapasqua, and E. Sangiorgi, Solid-State Electron. 44, 1523 (2000). sel SSELA5 0038-1101
15. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett. 69, 2728 (1996). apl APPLAB 0003-6951
16. M. Städele, B. R. Tuttle, and K. Hess, J. Appl. Phys. 89, 348 (2001). jap JAPIAU 0021-8979
17. R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, and R. A. Weller, Appl. Phys. Lett. 77, 2560 (2000). apl APPLAB 0003-6951