A physical compact model for direct tunneling from NMOS inversion layers

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1705-1716

  Clerc, R ^a   O'Sullivan, P ^b   McCarthy, K G ^c   Ghibaudo, G ^a   Pananakakis, G ^a   Mathewson, A ^b  

^a Grenoble INP Phelma   (France)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Circuit simulation; Direct tunneling; Gate current; MOS model; Quantum effects

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; QUANTUM THEORY; WAVE EQUATIONS;

GATE CURRENTS; INVERSION LAYERS;

MOS DEVICES;

EID: 0035478864     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00220-9     Document Type: Article

References (39)

1. Electronic properties of 2D systems
2. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film
3. 2/Si structures
4. Quantum mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs
5. Self consistent modelling of accumulation layers and tunneling currents through very thin oxides
6. Full quantum mechanical treatment of charge leakage in MOS capacitors with ultrathin oxide layers
7. Modelling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
8. Modeling gate and substrate currents due to conduction and valence-ba electron and hole tunneling
9. Direct tunneling current model for circuit simulation
10. Towards a compact model for MOSFETS with direct tunneling gate dielectrics
11. A simple model for quantisation effects in heavily doped silicon at inversion conditions
12. Influence of high substrate doping levels on the threshold voltage and the mobility of deep submicrometer MOSFET's
13. Bardeen's approach for tunneling in MOS structure
14. Quantum effect in Si-nMOS inversion layer at high substrate concentration
15. Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfaces
16. Analysis of the MOS transistor based on the self-consistent solution to the Schrödinger and Poisson equations and on the local mobility model
17. Heading for decananometer CMOS-Is navigation among icebergs still a viable strategy?
18. An explicit surface-potential-based MOSFET model for circuit simulation
19. An efficient and accurate compact model for thin oxide MOSFET intrinsic capacitance considering the finite charge layer thickness
20. Capacitance-voltage (C-V) characterization of 20 Å thick gate oxide: Parameter extraction and modeling
21. Resonant behavior symmetry, and singularity of the transfer matrix in asymmetric tunneling structrure
22. On the reduction of direct tunneling leakage through ultrathin gate oxides by a one dimensional Schrodinger-Poisson solver
23. A comparison between semi classical escape times for gate current calculations
24. Tunnelling from a many-particle point of view
25. Quantum Effects in MOS Devices
26. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices
27. Gate tunnel current in an MOS transistor
28. Zur Berechnung des tunnelstroms durch eine trapezförmige potentialstufe
29. Modelling and simulation of tunneling through ultra-thin gate dielectrics
30. 2
31. Electrical characterisation and modelling of MOS structures with ultra thin oxide
32. MOS capacitance measurements for high leakage thin dielectrics
33. On tunneling in metal-oxide-silicon structures