Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 871-877

  Vanalme, G M ^a   Goubertt, L ^a   Van Meirhaeghe, R L ^a   Cardon, F ^a   Van Daele, P ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; HYDROCHLORIC ACID; HYDROFLUORIC ACID; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STOICHIOMETRY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

BALLISTIC ELECTRON EMISSION MICROSCOPY; DEIONIZED WATER; SCHOTTKY BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 0033190090     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/321     Document Type: Article

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