Defects induced in GaN by europium implantation

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2244-2246

  Mamor, M ^a   Matias, V ^a   Vantomme, A ^a   Colder, A ^b   Marie, P ^b   Ruterana, P ^b  

^a KU LEUVEN   (Belgium)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; EUROPIUM; HOLE TRAPS; ION IMPLANTATION; IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

CHANNELING ANALYSIS; ELASTIC STRAIN; ROOM TEMPERATURE; VACANCY DISTRIBUTION;

GALLIUM NITRIDE;

EID: 7244221511     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1797563     Document Type: Article

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