Microcrystalline-silicon transistors and CMOS inverters fabricated near the transition to amorphous-growth regime

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1924-1929

  Chan, Kah Yoong ^a,b,c   Gordijn, Aad ^a   Stiebig, Helmut ^a,d   Knipp, Dietmar ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JACOBS UNIVERSITY BREMEN   (Germany)

^c MULTIMEDIA UNIVERSITY   (Malaysia)

^d Malibu GmbH and Co KG   (Germany)

Author keywords

Complementary metal oxide Semiconductor (CMOS) inverter; Crystalline volume fraction; Microcrystalline silicon; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS PHASE; CHARGE TRANSPORT; CMOS INVERTERS; COMPLEMENTARY-METAL-OXIDE - SEMICONDUCTOR (CMOS) INVERTER; CORE ELEMENTS; CRYSTALLINE VOLUME FRACTION; DEVICE PARAMETERS; ELECTRONIC DEFECTS; GROWTH REGIME; HIGH MOBILITY; HIGH VOLTAGE GAIN; HOLE CHARGE; LARGE-AREA ELECTRONICS; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR; SILICON CRYSTALLITES; SILICON TRANSISTORS; THIN-FILM TRANSISTORS (TFTS);

CARRIER MOBILITY; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; MICROCRYSTALLINE SILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILM DEVICES; THIN FILM TRANSISTORS; TITRATION; TRANSISTORS; VOLUME FRACTION;

AMORPHOUS SILICON;

EID: 69549119874     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026325     Document Type: Article

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