Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Lee, Czang Ho ^a,d   Sazonov, Andrei ^a   Nathan, Arokia ^a,c   Robertson, John ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

FIELD EFFECT MOBILITIES; NANOCRYSTALLINE SILICON; RADIO-FREQUENCY;

THIN FILM TRANSISTORS;

EID: 33845936791     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408630     Document Type: Article

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