Reduced pressure chemical vapor deposition of Si/Si 1-yC y heterostructures for n-type metal-oxide-semiconductor transistors

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2368-2373

  Hartmann, J M ^a   Ernst, T ^a   Loup, V ^a   Ducroquet, F ^a   Rolland, G ^a   Lafond, D ^a   Holliger, P ^a   Laugier, F ^a   Semeria M N ^a   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; C ATOMS; CARBON ATOMS; CARBON CONCENTRATIONS; CARRIER CONFINEMENTS; CHANNEL REGION; CONDUCTION BAND OFFSET; DIFFUSION PATHS; DOPING PROFILES; ELECTRICAL ACTIVATION; GATE LENGTH; GATE OXIDATION; INTERSTITIAL SITES; LOADING EFFECTS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NMOS TRANSISTORS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SECONDARY IONS; TOTAL CARBON; TYPE II;

ATOMS; CARBON; CHEMICAL VAPOR DEPOSITION; DEGRADATION; DIELECTRIC DEVICES; ELECTRON MOBILITY; HETEROJUNCTIONS; LOADING; MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; VAPORS;

SILICON WAFERS;

EID: 0036732225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497451     Document Type: Article

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