On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Cherkashin, N ^a   Hytch M J ^a   Houdellier, F ^a   Hue F ^a   Paillard, V V ^a   Claverie, A ^a   Gouye A ^b   Kermarrec, O ^b   Rouchon, D ^c   Burdin, M ^c   Holliger, P ^c  

^a CEMES CNRS   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON ATOMS; CONVERGENT-BEAM ELECTRON DIFFRACTIONS; CROSS-SECTIONAL IMAGES; ELASTIC STRAINS; GEOMETRIC PHASE ANALYSIS; GROWTH CONDITIONS; HIGH RESOLUTION X-RAY DIFFRACTIONS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; LAYER THICKNESS; SI (001) SUBSTRATES; SI SUBSTRATES; STRAINED-SI:C; TOTAL CARBONS;

ELECTRON DIFFRACTION; SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 64349086818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116648     Document Type: Article

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