Gate-controlled resonant interband tunneling in silicon

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1707-1709

  Sedlmaier, S ^a   Bhuwalka, Krishna K ^a   Ludsteck, A ^a   Schmidt, M ^a   Schulze, J ^a   Hansch, W ^a,b   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON MOBILITY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING; SILICON; STATISTICS;

BAND DIAGRAMS; CONDUCTION BANDS; GATE-CONTROLLED RESONANT INTERBAND TUNNELING; SURFACE TUNNEL CURRENT;

RESONANT TUNNELING;

EID: 4944232119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1783023     Document Type: Article

References (9)

1. R. Duschl, O. G. Schmidt, and K. Eberl, Appl. Phys. Lett. 76, 879 (2000).
2. S. Rommel, T. Dillon, P. Berger, P. Thompson, K. Hobart, R. Lake, and A. Seabaugh, IEEE Electron Device Lett. 20, 329 (1999).
3. N. Jin, S.-Y. Chung, A. Rice, P. Berger, R. Yu, P. Thompson, and R. Lake, Appl. Phys. Lett. 83, 3308 (2003).
4. W. Hansch, P. Borthen, J. Schulze, C. Fink, T. Sulima, and I. Eisele, Jpn. J. Appl. Phys., Part 1 40, 3131 (2001).
5. S. Sedlmaier, K. K. Bhuwalka, A. Ludsteck, J. Schulze, W. Hansch, and I. Eisele, Proceedings of the Third International Conference on SiGe(C) Epitaxy and Heterostructures, 2003, p. 226.
6. T. Nirschl, S. Sedlmaier, P.-F. Wang, W. Hansch, I. Eisele, and D. Schmitt-Landsiedel, Proceedings of the Fourth European Workshop on Ultimate Integration of Silicon, 2003, p. 139.
7. K. K. Bhuwalka, S. Sedlmaier, A. K. Ludsteck, C. Tolksdorf, J. Schulze, and I. Eisele, IEEE Trans. Electron Devices 51, 279 (2004).
8. ATLAS User's Manual (Silvaco International, Santa Clara, CA, 2002).
9. See, e.g., P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996).