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IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 94-96

An exclusive-nor based on resonant interband tunneling FET's

(5) Shen, J a,b Tehrani, S b Goronkin, H a,b Kramer, G a,b Tsui, R b

a IEEE

b Phoenix Corporation Research Laboratories (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; LOGIC GATES; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; RESISTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TUNNEL DIODES;

DC MEASUREMENT; EXCLUSIVE NOR; NEGATIVE DIFFERENTIAL RESISTANCE; RESONANT INTERBAND TUNNELING DIODE; TIMING MEASUREMENTS;

FIELD EFFECT TRANSISTORS;

EID: 0030107120 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.485178 Document Type: Article

Times cited : (27)

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4
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5
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- Resonant interband tunneling FET
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6
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7
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8
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- unpublished
- J. Shen, unpublished.
- Shen, J.¹

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