Simulation of the Esaki-tunneling FET

Solid-State Electronics

Volumn 47, Issue 7 SPEC., 2003, Pages 1187-1192

  Wang, Peng Fei ^a   Nirschl, Thomas ^a   Schmitt Landsiedel, Doris ^a   Hansch, Walter ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Esaki tunneling FET; MOSFET; Simulation; Zener tunneling

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON TUNNELING; MOS DEVICES; SILICON; THRESHOLD VOLTAGE;

SHORT CHANNEL EFFECTS (SCE);

MESFET DEVICES;

EID: 0038417912     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00045-5     Document Type: Conference Paper

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