Nanowire crossbar logic and standard cell-based integration

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 17, Issue 8, 2009, Pages 997-1007

  Dong, Mian ^a   Zhong, Lin ^a  

^a Rice University   (United States)

Author keywords

Crossbar; Logic synthesis; Nanotechnology; Nanowire; VLSI

Indexed keywords

A-DENSITY; CIRCUIT SOLUTION; COMPARATIVE STUDIES; CROSSBAR; CROSSBAR CIRCUITS; DESIGN METHODOLOGY; HIGH RESISTANCE; INTEGRATED CIRCUIT DESIGNS; LOGIC DENSITY; LOGIC SYNTHESIS; MOS-FET; MOSFET CIRCUITS; PROCESS TECHNOLOGIES; SILICON NANOWIRES; STANDARD CELL; VLSI;

CELL MEMBRANES; ELECTRIC BATTERIES; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; MOSFET DEVICES; NANOELECTRONICS; NANOWIRES; SWITCHING CIRCUITS; SYNTHESIS (CHEMICAL);

LOGIC CIRCUITS;

EID: 68549094625     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2008.2002303     Document Type: Article

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