New generation of predictive technology model for sub-45 nm early design exploration

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2816-2823

  Zhao, Wei ^a   Cao, Yu ^a  

^a Arizona State University   (United States)

Author keywords

Mobility degradation; Predictive modeling; Process variation; Saturation velocity; Threshold voltage

Indexed keywords

CARRIER MOBILITY; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; TECHNOLOGY;

MOBILITY DEGRADATION; PHYSICAL MODELS; PREDICTIVE TECHNOLOGY MODEL; PROCESS VARIATION; SATURATION VELOCITY;

CMOS INTEGRATED CIRCUITS;

EID: 33750600861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.884077     Document Type: Article

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