Carbon nanotube field effect transistors - Fabrication, device physics, and circuit implications

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2003, Pages

  Wong, H S P ^a   Appenzeller, J ^a   Derycke, V ^a   Martel, R ^a   Wind, S ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CARBON NANOTUBES; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARRIER INJECTION; GATE OXIDE THICKNESS; SATURATION TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0038306279     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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