Silicon p-FETs from ultrahigh density nanowire arrays

Nano Letters

Volumn 6, Issue 6, 2006, Pages 1096-1100

  Wang, Dunwei ^a   Sheriff, Bonnie A ^a   Heath, James R ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRE ARRAYS; ULTRAHIGH DENSITY;

ELECTRIC CURRENTS; ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; SILICON;

FIELD EFFECT TRANSISTORS;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; ELECTRICITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; IMPEDANCE; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; ELECTRIC WIRING; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROELECTRODES; NANOTECHNOLOGY; NANOTUBES; SILICON; TRANSISTORS;

EID: 33745763885     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052558g     Document Type: Article

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