Nanolithography using hierarchically assembled nanowire masks

Nano Letters

Volumn 3, Issue 7, 2003, Pages 951-954

  Whang, Dongmok ^a   Jin, Song ^a   Lieber, Charles M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CHEMICAL STRUCTURE; MATERIAL COATING; MOLECULAR SIZE; MOLECULAR STABILITY; NANOPARTICLE;

EID: 0141518628     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl034268a     Document Type: Article

References (24)

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17. Silicon NWs were dispersed in a solution of isooctane and 2-propanol (3: 1 v/v ratio) containing 50 μL of 5mM 1-octadecylamine in hexane per 1 mL of suspension. The NW suspension with surfactant (about 2.4 mL) was added dropwise to the center of the water surface of a Langmuir-Blodgett trough (KSV 5000 system, KSV Instruments Ltd), and then compressed to a surface pressure between 55 and 60 mN/m. Constant surface pressure was then maintained as the 1-octadecylamine slowly dissolves into the water subphase by reducing the surface area between the L-B barriers. The compression process was stopped when the desired surface area was reached, and then parallel SiNWs were horizontally transferred using the Langmuir-Schaefer method onto Si substrates.
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24. The length of the NWs sets a natural length scale for continuous line features produced by our method, and structures much larger than this length will naturally have "broken line" defects. In this regard, our hierarchical patterning represents a good method for controlling the defects; that is, using arrays comparable to or smaller than the average length of the NWs.