Characterization and modelling of low-frequency noise in PCM devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Fantini, P ^a   Beneventi, G Betti ^a,b   Calderoni, A ^a   Larcher, L ^b   Pavan, P ^b   Pellizzer, F ^a  

^a Numonyx   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; AMORPHOUS STATE; DRIFT MECHANISMS; LOW-FREQUENCY NOISE; NOISE INTENSITIES; PHYSICAL MODELS;

GERMANIUM; PULSE CODE MODULATION; TELLURIUM COMPOUNDS; THERMAL NOISE;

ELECTRON DEVICES;

EID: 64549102899     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796656     Document Type: Conference Paper

References (7)

1. S. Lai, IEDM Tech. Dig., 255 (2003).
2. P. Fantini et al., IEEE Electron Dev. Lett., 28 (2007) 1114.
3. A. Pirovano et al., IEEE Trans. Electron Dev., 51 (2004) 714.
4. P. Fantini et al., Appl. Phys. Lett., 88 (2006) 263506.
5. D. Ielmini et al., IEDMTech.Dig., 401 (2006).
6. D. Ielmini et al., IEDM Tech. Dig., 939 (2007).
7. I.V. Karpov et al., J.Appl.Phys., 102 (2007) pp. 124503-124508.