Mechanisms of damage formation in semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 16, 2009, Pages 2680-2689

  Wendler, E ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Amorphization; Ion implantation; Radiation damage; Semiconductors

Indexed keywords

ATOMIC COLLISION; DAMAGE ACCUMULATION; DAMAGE FORMATION; DEFECT ANNEALING; DEFECT TRANSFORMATION; ELECTRONIC ENERGY LOSS; ELECTRONIC EXCITATION; EMPIRICAL MODEL; ENERGETIC ION; IMPLANTED IONS; ION FLUENCES; ION FLUXES; PER UNIT; PRIMARY ENERGIES; RUTHERFORD BACKSCATTERING SPECTROMETRY; SEMICONDUCTORS; TARGET TEMPERATURE;

AMORPHIZATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ION BOMBARDMENT; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION IMPLANTATION;

EID: 68349146263     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.059     Document Type: Article

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