Effects of the ion energy on damage production in MeV ion-implanted GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 257-261

  Wesch, W ^a   Wendler, E ^a   Dharmarasu, N ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

GaAs; Ion implantation; MeV implantation; Radiation damage

Indexed keywords

BROMINE; CRYSTAL DEFECTS; ION IMPLANTATION; NUCLEAR ENERGY; RADIATION DAMAGE;

DAMAGE PRODUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035303281     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00634-0     Document Type: Conference Paper

References (11)