A study of amorphization energies in silicon for different implantation parameters

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 256, Issue 1, 2007, Pages 193-198

  Friedland, E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Amorphization; Damage profiles; Ion implantation; Silicon

Indexed keywords

AMORPHIZATION; ARGON; BOUNDARY CONDITIONS; CARBON; COMPUTER SIMULATION; ION IMPLANTATION;

AMORPHIZATION ENERGIES; CRITICAL DAMAGE ENERGIES; PARTICLE CHANNELING SPECTRA; TRIM SIMULATIONS;

SEMICONDUCTING SILICON;

EID: 33947096830     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.002     Document Type: Article

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