Ion beam induced damage formation in binary and ternary III-V compounds-an overview

AIP Conference Proceedings

Volumn 680, Issue , 2003, Pages 670-674

  Wendler, E ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ARSENIC COMPOUNDS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; GALLIUM PHOSPHIDE; INDIUM ARSENIDE; INDUSTRIAL RESEARCH; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; IONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; WIDE BAND GAP SEMICONDUCTORS;

CRITICAL TEMPERATURES; EMPIRICAL FORMULAS; IMPLANTATION CONDITIONS; NUCLEAR ENERGY DEPOSITION; PHENOMENOLOGICAL DESCRIPTION; STRONG DEPENDENCES; SUBSTRATE TEMPERATURE; TERNARY III-V COMPOUNDS;

GALLIUM COMPOUNDS;

EID: 84971311802     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1619804     Document Type: Conference Paper

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