Comparative study of damage production in ion implanted III-V-compounds at temperatures from 20 to 420 K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 155-165

  Wendler, E ^a   Breeger, B ^a   Schubert, Ch ^a   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Critical temperatures; Defect formation; GaAs; GaP; InAs; InP; Ion implantation

Indexed keywords

AMORPHIZATION; ANNEALING; DISLOCATIONS (CRYSTALS); RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

CRITICAL TEMPERATURE; DEFECT FORMATION; GALLIUM PHOSPHIDE; INDIUM ARSENIDE;

ION IMPLANTATION;

EID: 0032760762     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00597-7     Document Type: Article

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