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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 468-473

In situ RBS investigation of damage production during ion implantation in AlxGa1-xAs at 20 K

(4) Breeger, B a Wendler, E a Schubert, Ch a Wesch, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

AlGaAs; Damage; In situ RBS; Ion implantation; Low temperature

Indexed keywords

AMORPHIZATION; ANNEALING; ARGON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; GERMANIUM; GONIOMETERS; HELIUM; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033513752 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00736-8 Document Type: Article

Times cited : (20)

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