Comparison between the reversal temperature of IBIEC-IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 160, Issue 2, 2000, Pages 257-261

  Wendler, E ^a   Dharmarasu, N ^a,b   Glaser, E ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b ANNA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; INTERFACES (MATERIALS); ION BEAMS; POINT DEFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

INDIUM ARSENIDE; ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); ION BEAM INDUCED INTERFACIAL AMORPHIZATION (IBIIA);

ION BOMBARDMENT;

EID: 0342756835     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00594-7     Document Type: Article

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