Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 174, Issue 1-2, 2001, Pages 199-204

  Breeger, B ^a   Wendler, E ^a   Trippensee, W ^a   Schubert, Ch ^a   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

TWO-BEAM IRRADIATION CHAMBERS;

HIGH ENERGY PHYSICS;

EID: 0034832548     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00433-X     Document Type: Article

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