Radiation damage in ZnO ion implanted at 15 K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 16, 2009, Pages 2708-2711

  Wendler, E ^a   Bilani, O ^a   Gartner K ^a   Wesch, W ^a   Hayes, M ^b   Auret, F D ^b   Lorenz, K ^c   Alves, E ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF PRETORIA   (South Africa)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Ion implantation; Radiation damage; Zinc oxide; ZnO

Indexed keywords

AMORPHISATION; CHANNELLING SPECTRA; COMPUTER CODES; CONCENTRATION OF; DAMAGE ANALYSIS; DAMAGE EVOLUTION; DAMAGE FORMATION; DEFECT CONCENTRATIONS; DISLOCATION LOOP; DISPLACEMENT ENERGIES; FLUENCES; IMPLANTED IONS; ION FLUENCES; ION IMPLANTED; LATTICE ATOMS; RELATIVE CONCENTRATION; RUTHERFORD BACKSCATTERING SPECTROMETRY; TARGET CHAMBERS; TARGET TEMPERATURE; ZNO; ZNO SINGLE CRYSTALS;

ATOMIC SPECTROSCOPY; CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; SULFUR COMPOUNDS; ZINC; ZINC OXIDE;

DEFECTS;

EID: 68349141378     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.031     Document Type: Article

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