Anomalous damaging behaviour of AlAs during ion implantation at 15 K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 78-82

  Wendler, E ^a   Breeger, B ^a   Wesch, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

AlAs; Amorphisation; Ion implantation; RBS channelling

Indexed keywords

AMORPHIZATION; CHEMICAL BONDS; CRYSTAL LATTICES; DEPOSITION; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; IRRADIATION; NUCLEATION; POINT DEFECTS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SODIUM; SPECTROMETRY; XENON;

ALUMINUM ARSENIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035302042     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00581-4     Document Type: Conference Paper

References (14)