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Volumn 362, Issue 2-3, 2007, Pages 202-207
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Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON BEAMS;
ELECTRON IRRADIATION;
PARAMAGNETIC RESONANCE;
POINT DEFECTS;
POSITRON ANNIHILATION SPECTROSCOPY;
SINGLE CRYSTALS;
BEAM ENERGIES;
HEXAGONAL POLYTYPES;
NUCLEAR APPLICATIONS;
SILICON DISPLACEMENT THRESHOLD ENERGY;
SILICON CARBIDE;
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EID: 34247497256
PISSN: 00223115
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnucmat.2007.01.023 Document Type: Article |
Times cited : (18)
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References (13)
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