Integration of atomic layer deposition-grown copper seed layers for Cu electroplating applications

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Wu, L ^a   Eisenbraun, E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLACETONATES; ATOMIC HYDROGEN; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COPPER SEED; CU ELECTROPLATING; ELECTROCHEMICAL DEPOSITION; HIGH ASPECT RATIO; INTEGRATION APPROACH; INTERCONNECT APPLICATIONS; NANOSCALE SEMICONDUCTORS; PATTERNED STRUCTURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SEED LAYER; VOID-FREE;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; ATOMS; COPPER; ELECTROPLATING; HYDROGEN; METALLIC COMPOUNDS; MOS DEVICES; REDUCTION;

PLASMA DEPOSITION;

EID: 68049144452     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3166184     Document Type: Article

References (39)

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, http://public.itrs.net, last accessed July 10, 2009.
2. R. Rosenberg, D. C. Edelstein, C. -K. Hu, and K. P. Rodbell, Annu. Rev. Mater. Sci. 0084-6600, 30, 229 (2000). 10.1146/annurev.matsci.30.1.229
3. U. Helmersson, M. Lattemann, J. Bohlmark, A. P. Ehiasarian, and J. T. Gudmundsson, Thin Solid Films 0040-6090, 513, 1 (2006). 10.1016/j.tsf.2006.03. 033
4. W. L. Goh and K. T. Tan, Thin Solid Films 0040-6090, 462-463, 275 (2004). 10.1016/j.tsf.2004.05.100
5. C. M. Tan and A. Roy, Mater. Sci. Eng., R., 58, 1 (2007). 10.1016/j.mser.2007.04.002 0927-796X
6. M. Ritala and M. Leskelä, Handbook of Thin Film Materials, Vol. 1, p. 103, Academic, San Diego, CA (2002).
7. H. Kim, J. Vac. Sci. Technol. B 1071-1023, 21, 2231 (2003). 10.1116/1.1622676
8. C. Yang, J. S. Jeng, and J. S. Chen, Thin Solid Films 0040-6090, 420-421, 398 (2002). 10.1016/S0040-6090(02)00810-6
9. H. Kim, Y. Kojima, H. Sato, N. Yoshii, S. Hosaka, and Y. Shimogaki, Jpn. J. Appl. Phys., Part 2, 45, L233 (2006). 10.1143/JJAP.45.L233
10. H. Kim, H. B. Bhandari, S. Xu, and R. G. Gordon, J. Electrochem. Soc. 0013-4651, 155, H496 (2008). 10.1149/1.2912326
11. P. Martensson and J. O. Carlsson, J. Electrochem. Soc. 0013-4651, 145, 2926 (1998). 10.1149/1.1838738
12. A. Niskanen, A. Rahtu, T. Sajavaara, K. Arstila, M. Ritala, and M. Leskelä, J. Electrochem. Soc. 0013-4651, 152, G25 (2005). 10.1149/1.1824046
13. Z. Li, A. Rahtu, and R. G. Gordon, J. Electrochem. Soc. 0013-4651, 153, C787 (2006). 10.1149/1.2338632
14. L. Wu and E. Eisenbraun, J. Vac. Sci. Technol. B 1071-1023, 25, 2581 (2007). 10.1116/1.2779050
15. L. Wu, W. Zeng, and E. Eisenbraun, ECS Trans. (7), 11, 67 (2007). 10.1149/1.2779071
16. L. Wu and E. Eisenbraun, Electrochem. Solid-State Lett. 1099-0062, 11, H107 (2008). 10.1149/1.2844207
17. H. Lee, S. S. Wong, and S. D. Lopatin, J. Appl. Phys. 0021-8979, 93, 7 (2003).
18. S. Kumar, D. Greenslit, T. Chakraborty, and E. Eisenbraun, J. Vac. Sci. Technol. A 0734-2101, 27, 572 (2009). 10.1116/1.3122664
19. M. Zheng, M. Willey, and A. C. West, Electrochem. Solid-State Lett. 1099-0062, 8, C151 (2005). 10.1149/1.2035701
20. Scotch MagicTM Tape, 3M Company, www.3m.com, last accessed July 10, 2009.
21. R. Lacombe, Adhesion Measurement Methods: Theory and Practice, Taylor & Francis, New York (2005).
22. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev. 0018-8646, 42, 567 (1998).
23. L. Su, S. Subbanna, E. Crabbe, P. Agnello, E. Nowak, R. Schulz, S. Rauch, H. Ng, T. Newman, A. Ray, in IEEE Symposium on VLSI, Technical Digest, IEEE, p. 12 (1996).
24. K. N. Tu, J. Appl. Phys. 0021-8979, 94, 5451 (2003). 10.1063/1.1611263
25. T. P. Moffat, M. Walker, P. J. Chen, J. E. Bonevich, W. F. Egelhoff, L. Richter, C. Witt, T. Aaltonen, M. Ritala, M. Leskelä, J. Electrochem. Soc. 0013-4651, 153, C37 (2006). 10.1149/1.2131826
26. L. D. Burke, N. S. Naser, and R. Sharna, J. Appl. Electrochem. 0021-891X, 38, 377 (2008). 10.1007/s10800-007-9449-3
27. H. Kim and Y. Shimogaki, J. Electrochem. Soc. 0013-4651, 154, G13 (2007). 10.1149/1.2392984
28. H. Kim, T. Koseki, T. Ohba, T. Ohta, Y. Kojima, H. Sato, and Y. Shimogaki, J. Electrochem. Soc. 0013-4651, 152, G594 (2005). 10.1149/1.1939353
29. Handbook of Chemistry and Physics, D. R. Lide, Editor, pp. 5-72, CRC, Boca Raton, FL (1995).
30. S. L. Cohen, M. Liehr, and S. Kasi, Appl. Phys. Lett. 0003-6951, 60, 50 (1992). 10.1063/1.107370
31. U. Cohen, Solid State Technol. 0038-111X, 49, 7 (2006).
32. J. H. Sukamto, E. Webb, T. Andryushchenko, and J. Reid, J. Appl. Electrochem. 0021-891X, 34, 283 (2004). 10.1023/B:JACH.0000015617.07734.ee
33. J. Huo, R. Solanki, and J. McAndrew, J. Mater. Res. 0884-2914, 17, 2394 (2002). 10.1557/JMR.2002.0350
34. U. -S. Chen, W. -J. Hsieh, H. C. Shih, Y. -S. Chang, K. -W. Weng, and D. -Y. Wang, Nucl. Instrum. Methods Phys. Res. B 0168-583X, 237, 470 (2005). 10.1016/j.nimb.2005.05.017
35. E. H. Lee, N. Truong, R. Prater, and M. Diana, U.S. Pat. Appl. 20,080,274,369 (2008).
36. A. Tzanavaras, G. Young, and S. Gleixner, J. Electrochem. Soc. 0013-4651, 152, C101 (2005). 10.1149/1.1846712
37. W. S. Rasband, ImageJ, U.S. National Institutes of Health, Bethesda, MD, http://rsb.info.nih.gov/ij/, last accessed July 10, 2009.
38. D. P. Tracy, D. B. Knorr, and K. P. Rodbell, J. Appl. Phys. 0021-8979, 76, 2671 (1994). 10.1063/1.357564
39. C. E. Murray, K. P. Rodbell, and P. M. Vereecken, Thin Solid Films 0040-6090, 503, 207 (2006). 10.1016/j.tsf.2005.11.105