Optical doping: Active control of metal-insulator transition in nanowire

Nano Letters

Volumn 8, Issue 11, 2008, Pages 3577-3581

  Terada, Yasuhiko ^a   Yoshida, Shoji ^a   Okubo, Atsushi ^a   Kanazawa, Ken ^a   Xu, Maojie ^a   Takeuchi, Osamu ^a   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SYSTEM ANALYSIS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC WIRE; METAL INSULATOR BOUNDARIES; NANOWIRES; PHOTOEXCITATION; SEMICONDUCTOR INSULATOR BOUNDARIES;

ACTIVE CONTROLS; ACTIVE ELEMENTS; BAND FILLINGS; CARRIER DENSITIES; CHARGE DOPING; FUNCTIONAL DEVICES; LOW-DIMENSIONAL SYSTEMS; METAL-INSULATOR TRANSITIONS; NANO-SCALE; NANO-SIZED; ONE-DIMENSIONAL; REVERSIBLE CONTROLS; SURFACE STATE;

METAL INSULATOR TRANSITION;

EID: 60749123354     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801350p     Document Type: Article

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