Molecular Memories That Survive Silicon Device Processing and Real-World Operation

Science

Volumn 302, Issue 5650, 2003, Pages 1543-1545

  Liu, Zhiming ^a   Yasseri, Amir A ^a   Lindsey, Jonathan S ^b   Bocian, David F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PORPHYRINS; REDOX REACTIONS; SEMICONDUCTOR DEVICES; SILICON;

MICROCIRCUITRY;

SEMICONDUCTOR STORAGE;

SILICON;

MOLECULAR ANALYSIS; SEMICONDUCTOR INDUSTRY;

ARTICLE; INFORMATION RETRIEVAL; MOLECULAR DYNAMICS; OXIDATION REDUCTION REACTION; PHOTODEGRADATION; PRIORITY JOURNAL; TEMPERATURE; THERMOSTABILITY;

EID: 0344395599     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1090677     Document Type: Article

References (17)

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17. This work was supported by the Defense Advanced Research Projects Agency Moletronics Program (MDA972-01-C-0072) and by ZettaCore, Incorporated. We thank K. Mobley (ZettaCore, Incorporated) for insightful comments on DRAM operating characteristics.