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Volumn 20, Issue 23, 2008, Pages 4541-4546

Reversible modulation of conductance in silicon devices via UV/visible-light irradiation

(9) He, Tao a Lu, Meng a Yao, Jun a He, Jianli a Chen, Bo a Di Spigna, Neil Halen b Nackashi, David P b Franzon, Paul D b Tour, James M a

a RICE UNIVERSITY (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON IRRADIATION; GOLD; GRAFTING (CHEMICAL); ION EXCHANGE; MODULATION; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BACK CONTACTS; BACK GATES; BURIED OXIDES; CHANNEL DEVICES; CHANNEL REGIONS; CONDUCTION CHANNELS; CONTROL SAMPLES; DEVICE CHANNELS; HYBRID DESIGNS; LIGHT IRRADIATIONS; MOS FETS; NEW OPPORTUNITIES; PERFORMANCE OF DEVICES; SILICON DEVICES; SILICON ON INSULATORS; SILICON SURFACES;

SILICON WAFERS;

EID: 57349135670 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200703084 Document Type: Article

Times cited : (7)

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