Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Journal of Materials Research

Volumn 22, Issue 7, 2007, Pages 1899-1906

  Chiou, Yan Kai ^a   Chang, Che Hao ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARACTERIZATION; CHARGE DENSITY; MOS CAPACITORS; PERMITTIVITY; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

HAFNIUM OXIDE; PRECURSOR; TRAP CHARGE DENSITY;

HAFNIUM COMPOUNDS;

EID: 34547126458     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0242     Document Type: Article

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