Atomic layer chemical vapor deposition of hafnium oxide using anhydrous hafnium nitrate precursor

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 73-78

  Conley Jr , J F ^a   Ono, Y ^a   Tweet, D J ^a   Zhuang, W ^a   Solanki, R ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; LEAKAGE CURRENTS; OXYGEN; PERMITTIVITY; QUANTUM THEORY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANHYDROUS HAFNIUM NITRATE; ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; CAPACITANCE VERSUS VOLTAGE MEASUREMENT; HALFNIUM OXIDE; X RAY REFLECTIVITY;

HAFNIUM COMPOUNDS;

EID: 0036952237     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b2.2     Document Type: Conference Paper

References (27)

1. G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. "Front End Processes," in International Technology Roadmap for Semiconductors, 2001 Edition, http://public.itrs.net/Files/2001ITRS/Home.htm.
3. M.L. Green, E.P. Gusev, R. Degraeve, and E.L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
4. K.J. Hubbard and D.G. Schlom, J. Mater. Res. 11, 2757 (1996).
5. J. Robertson, J. Vac. Sci. Tech. B18, 1785 (2000).
6. B.H. Lee, L. Kang, W.J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J.C. Lee, Tech. Digest: Inter. Elec. Dev. Meet., p. 133, (1999),
7. Appl. Phys. 76, 1926 (2000).
8. T. Ma, S.A. Campbell, R. Smith, N. Hoilien, H. Boyong, W.L. Gladfelter, C. Hobbs, D. Buchanan, C. Taylor, M. Gribelyuk, M. Tiner, M. Coppel, and J.J. Lee, IEEE Trans. Elec. Dev. 48, 2348 (2001).
9. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
10. C.M. Perkins, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, S. Haukka, and M. Tuominen, Appl. Phys. Lett. 78, 2357 (2001).
11. R.C. Smith, T. Ma, N. Hoilien, L.Y. Tsung, M.J. Bevan, L. Colombo, J. Roberts, S.A. Campbell, and W.L. Gladfelter, Adv. Mater. Opt. and Electron. 10, 105 (2000).
12. D.G. Colombo, D.C. Gilmer, V.G. Young, S.A. Campbell, and W.L. Gladfelter, Chem. Vap. Deposition 4, 220 (1998).
13. J. Park, B. K. Park, M. Cho, C. S. Hwang, K. Oh, D.Y. Yang, J. Electrochem. Soc. 149(1), G89-G94 (2002).
14. W. Zhu, T.P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, IEDM 2001, p. 463.
15. C. Hobbs, H. Tseng, K. Reid, et al., IEDM 2001 Tech. Digest, p. 651.
16. Y. Kim et al., IEDM 2001 Tech. Digest, p. 455.
17. J.F. Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, W. Gao, M.S. Kaiser, and R. Solanki, Electrochem. Soc. Lett. 5, C57-C59 (2000).
18. R. Gordan, J. Becker, D. Hausmann, and S. Suh, Chem. of Mat. 13, 2463-4 (2001).
19. E.P. Gusev, E. Cartier, M. Copel, M. Gribelyuk, D.A. Buchanan, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski M. Tuominen, M. Linnermo, and S. Haukka, in Proc. of the ECS Meeting, Abstract #578 (March 2001).
20. Y. Ma, Y. Ono, L. Stecker, D.R. Evans, and S.T. Hsu, IEDM Tech. Digest, 149 (1999).
21. H. Zhang and R. Solanki, J. Electrochem. Soc. 148, 63 (2001).
22. S. Sayan, E. Garfunkel, and S. Zuzer, Appl. Phys. Lett. 81 (12), 2135 (2002).
23. M. Balog, M. Schieber, M. Michman, and S. Patai, Thin Sol. Films 47, 247 (1977).
24. T. Suntola Materials Science Reports 4, 261-312 (1989).
25. M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grassbauer, Thin Solid Films 000, 1 (1994).
26. M. Tuominen, T. Kanniainen, and S. Haukka, in Electrochemical Society Proceedings 2000-9, p. 271-82 (2000).
27. A. Kang, P.M. Lenahan, J.F. Conley, Jr., and R. Solanki, submitted to Appl. Phys. Lett.