Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1291-1293

  Lay, T S ^a   Chang, S C ^a   Din, G J ^a   Yeh, C C ^b,c   Hung, W H ^b,c   Lee, W G ^d   Kwo, J ^d   Hong, M ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OXIDATION; SILICON; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYERS; SILICON OXIDATION STATES; VALENCE-BAND EDGES;

ELECTRONIC STRUCTURE;

EID: 31144436801     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1881633     Document Type: Conference Paper

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