Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Yerci, S ^a,d   Yildiz, I ^a   Kulakci, M ^a   Serincan, U ^a,b   Barozzi, M ^c   Bersani, M ^c   Turan, R ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b ANADOLU UNIVERSITY   (Turkey)

^c ITC IRST   (Italy)

^d Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILE INVESTIGATIONS; IMPLANTATION DOSES; NANOCRYSTAL FORMATION; PEAK POSITION;

ION IMPLANTATION; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOCRYSTALS;

EID: 34547558366     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756622     Document Type: Article

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