Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 2, 2006, Pages 206-211

  Atanassova, E ^a   Aygun, G ^b,c   Turan, R ^b   Babeva, Tz ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^c IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

^d CENTRAL LABORATORY OF PHOTOPROCESSES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BONDING; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER BEAMS; NEODYMIUM LASERS; OPTIMIZATION; OXIDATION; REFRACTIVE INDEX; STRUCTURE (COMPOSITION); TANTALUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ENERGY DENSITY; REFLECTANCE MEASUREMENTS; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 33644545097     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2165656     Document Type: Article

References (28)

1. International Technology Roadmap for Semiconductors (ITRS) (Semiconductor Industry Association, San Jose, 2003); http://public.itrs.net
2. International Technology Roadmap for Semiconductors (ITRS) (Semiconductor Industry Association, San Jose, 2003); http://public.itrs.net
3. A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
4. S. Kamiyama, P. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama, and A. Iskitani, J. Electrochem. Soc. 140, 1617 (1993).
5. S. R. Jeon, S. W. Han, and J. W. Park, J. Appl. Phys. 77, 5978 (1995).
6. J. V. Chrahn, P. E. Hellberg, and E. Olson, J. Appl. Phys. 84, 1632 (1998).
7. E. Atanassova, Microelectron. Reliab. 39, 1185 (1999).
8. E. Atanassova and T. Dimitrova, in Handbook of Surfaces and Interfaces of Materials, edited by, H. S. Nalwa, (Academic, San Diego, CA, 2001), Vol. 4, p. 439.
9. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R. 22, 269 (1998).
10. K. Kukli, J. Aarik, A. Aidla, O. Kohan, T. Uustare, and V. Sammelselg, Thin Solid Films 260, 135 (1995).
11. Z. Mingfei, F. Zhengwen, Y. Haijun, Z. Zhuangjian, and Q. Qizong, Appl. Surf. Sci. 108, 399 (1997).
12. Y. Nishimura, A. Shinkawa, H. Ujita, M. Tsuji, and M. Nakamura, Appl. Surf. Sci. 136, 22 (1998).
13. J. Y. Zhang and I. W. Boyd, Appl. Surf. Sci. 168, 234 (2000).
14. S. Boughaba, G. I. Sproule, J. P. McCaffrey, M. Islam, and M. J. Graham, Thin Solid Films 358, 104 (2000).
15. J. Y. Kim, M. C. Nielsen, E. J. Rymaszewski, and T. M. Lu, J. Appl. Phys. 87, 1448 (2000).
16. I. W. Boyd and J. Y. Zhang, Microelectron. Reliab. 40, 649 (2000).
17. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001), and references therein.
18. J. Y. Zhang, V. Dusastre, and I. W. Boyd, Mater. Sci. Semicond. Process. 4, 313 (2001).
19. E. Atanassova, N. Novkovski, A. Paskaleva, and M. Pesovska-Gjorgjevich, Solid-State Electron. 46, 1887 (2002).
20. M. Passacantando, F. Jolly, L. Lozzi, V. Salerni, P. Picozzi, S. Santucci, C. Corsi, and D. Zintu, J. Non-Cryst. Solids 322, 225 (2003).
21. G. Aygun, E. Atanassova, A. Alicakir, L. Ozyuzer, and R. Turan, J. Phys. D 37, 1569 (2004).
22. G. Aygun, E. Atanassova, R. Turan, and Tz. Babeva, Mater. Chem. Phys. 89, 316 (2005).
23. Tz. Babeva, S. Kitova, B. Mednikarov, and I. Konstantinov, Appl. Opt. 41, 3840 (2002).
24. T. F. Coleman and Y. Li, SIAM J. Optim. 6, 418 (1996).
25. J. Y. Zhang, Q. Fang, and I. W. Boyd, Appl. Surf. Sci. 138-139, 320 (1999).
26. J. J. Yu, J. Y. Zhang, and I. W. Boyd, Appl. Surf. Sci. 186, 57 (2002).
27. x-ray diffraction file, ICDD.
28. Tz. Babeva, E. Atanassova, and J. Koprinarova, Phys. Status Solidi A 202, 330 (2005).