Comparison of thermal and plasma oxidations for HfO 2 /Si interface

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 228-233

  Hayashi, S ^a   Yamamoto, K ^a   Harada, Y ^a   Mitsuhashi, R ^a   Eriguchi, K ^a   Kubota, M ^a   Niwa, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

HfO 2; Oxidation; Plasma; Reactive sputtering; RTA

Indexed keywords

HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; PLASMAS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON;

PLASMA OXIDATION;

INTERFACES (MATERIALS);

EID: 0038747052     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00427-6     Document Type: Conference Paper

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